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PJQ4443P_R2_00001

PJQ4443P_R2_00001 Panjit International Inc.

PJQ4443P.pdf
Hersteller: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 59.5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 46A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
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Lieferzeit 10-14 Tag (e)
AnzahlPreis
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17+1.04 EUR
100+0.8 EUR
500+0.63 EUR
1000+0.51 EUR
2000+0.46 EUR
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Technische Details PJQ4443P_R2_00001 Panjit International Inc.

Description: 40V P-CHANNEL ENHANCEMENT MODE M, Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DFN3333-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.1W (Ta), 59.5W (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 46A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

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PJQ4443P_R2_00001 PJQ4443P_R2_00001 Panjit International Inc. PJQ4443P.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 59.5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 46A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4443P_R2_00001 PJQ4443P.pdf
PJQ4443P_R2_00001
Hersteller: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 59.5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 46A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH