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PJQ4464AP-AU_R2_000A1

PJQ4464AP-AU_R2_000A1 Panjit

PJQ4464AP_AU-1867512.pdf Hersteller: Panjit
MOSFETs 60V N-Channel Enhancement Mode MOSFET
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10+1.03 EUR
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Technische Details PJQ4464AP-AU_R2_000A1 Panjit

Description: 60V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 33A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 16A, 10V, Power Dissipation (Max): 2.4W (Ta), 48W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote PJQ4464AP-AU_R2_000A1 nach Preis ab 0.47 EUR bis 1.51 EUR

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PJQ4464AP-AU_R2_000A1 PJQ4464AP-AU_R2_000A1 Hersteller : Panjit International Inc. PJQ4464AP-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 16A, 10V
Power Dissipation (Max): 2.4W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3149 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
18+1.01 EUR
100+0.7 EUR
500+0.56 EUR
1000+0.51 EUR
2000+0.47 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4464AP-AU_R2_000A1 PJQ4464AP-AU_R2_000A1 Hersteller : Panjit International Inc. PJQ4464AP-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 16A, 10V
Power Dissipation (Max): 2.4W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Qualification: AEC-Q101
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