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PJQ4465AP-AU_R2_000A1

PJQ4465AP-AU_R2_000A1 Panjit

PJQ4465AP_AU-1867513.pdf Hersteller: Panjit
MOSFETs 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 2182 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.10 EUR
10+0.92 EUR
100+0.61 EUR
500+0.49 EUR
1000+0.41 EUR
2500+0.39 EUR
5000+0.35 EUR
Mindestbestellmenge: 3
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Technische Details PJQ4465AP-AU_R2_000A1 Panjit

Description: 60V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc), Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, Power Dissipation (Max): 2W (Ta), 20W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote PJQ4465AP-AU_R2_000A1 nach Preis ab 0.38 EUR bis 1.23 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PJQ4465AP-AU_R2_000A1 PJQ4465AP-AU_R2_000A1 Hersteller : Panjit International Inc. PJQ4465AP-AU.pdf Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
22+0.83 EUR
100+0.57 EUR
500+0.45 EUR
1000+0.41 EUR
2000+0.38 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4465AP-AU_R2_000A1 Hersteller : PanJit Semiconductor PJQ4465AP-AU.pdf PJQ4465AP-AU-R2 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4465AP-AU_R2_000A1 PJQ4465AP-AU_R2_000A1 Hersteller : Panjit International Inc. PJQ4465AP-AU.pdf Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH