PJQ4466AP_R2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 44.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
auf Bestellung 4237 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 1.35 EUR |
| 23+ | 1.15 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.51 EUR |
| 2000+ | 0.46 EUR |
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Technische Details PJQ4466AP_R2_00001 Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 33A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V, Power Dissipation (Max): 2W (Ta), 44.6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V.
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PJQ4466AP_R2_00001 | Hersteller : Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 44.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V |
Produkt ist nicht verfügbar |
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PJQ4466AP_R2_00001 | Hersteller : Panjit |
MOSFET 60V N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |