| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.57 EUR |
| 10+ | 0.98 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.49 EUR |
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Technische Details PJQ4548P-AU_R2_002A1 Panjit
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Qualification: AEC-Q101, Grade: Automotive, Vgs(th) (Max) @ Id: 2.3V @ 50µA, Power Dissipation (Max): 2.5W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 43A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DFN3333-8.
Weitere Produktangebote PJQ4548P-AU_R2_002A1 nach Preis ab 0.52 EUR bis 1.68 EUR
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PJQ4548P-AU_R2_002A1 | Panjit International Inc. |
 Description: 40V N-CHANNEL ENHANCEMENT MODE MQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN3333-8 Vgs(th) (Max) @ Id: 2.3V @ 50µA Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 43A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 3660 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4548P-AU_R2_002A1 |
|
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 3660 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.68 EUR |
| 19+ | 1.13 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.56 EUR |
| 2000+ | 0.52 EUR |