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PJQ4548P-AU_R2_002A1

PJQ4548P-AU_R2_002A1 Panjit International Inc.


PJQ4548P-AU.pdf Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3660 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
19+0.95 EUR
100+0.65 EUR
500+0.52 EUR
1000+0.47 EUR
2000+0.44 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PJQ4548P-AU_R2_002A1 Panjit International Inc.

Description: 40V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 43A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 10A, 10V, Power Dissipation (Max): 2.5W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 50µA, Supplier Device Package: DFN3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote PJQ4548P-AU_R2_002A1 nach Preis ab 0.40 EUR bis 1.44 EUR

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PJQ4548P-AU_R2_002A1 PJQ4548P-AU_R2_002A1 Hersteller : Panjit PJQ4548P_AU-3162027.pdf MOSFETs 40V N-Channel Enhancement Mode MOSFET
auf Bestellung 4947 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.44 EUR
10+0.96 EUR
100+0.67 EUR
500+0.53 EUR
1000+0.45 EUR
5000+0.40 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4548P-AU_R2_002A1 PJQ4548P-AU_R2_002A1 Hersteller : PanJit Semiconductor PJQ4548P-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W; DFN3333-8
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 43A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 30W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 172A
Mounting: SMD
Case: DFN3333-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4548P-AU_R2_002A1 PJQ4548P-AU_R2_002A1 Hersteller : Panjit International Inc. PJQ4548P-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4548P-AU_R2_002A1 PJQ4548P-AU_R2_002A1 Hersteller : PanJit Semiconductor PJQ4548P-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W; DFN3333-8
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 43A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 30W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 172A
Mounting: SMD
Case: DFN3333-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH