PJQ4848P_R2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 40V DUAL N-CHANNEL ENHANCEMENT M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333B-8
Part Status: Active
auf Bestellung 3705 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 1.18 EUR |
| 17+ | 1.04 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.51 EUR |
| 2000+ | 0.46 EUR |
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Technische Details PJQ4848P_R2_00001 Panjit International Inc.
Description: 40V DUAL N-CHANNEL ENHANCEMENT M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), 33W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V, Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333B-8, Part Status: Active.
Weitere Produktangebote PJQ4848P_R2_00001
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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PJQ4848P_R2_00001 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 37A; Idm: 120A; 39.6W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 37A Pulsed drain current: 120A Power dissipation: 39.6W Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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PJQ4848P_R2_00001 | Hersteller : Panjit International Inc. |
Description: 40V DUAL N-CHANNEL ENHANCEMENT M Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333B-8 Part Status: Active |
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PJQ4848P_R2_00001 | Hersteller : Panjit |
MOSFET /4848/TR/13"/HF/5K/DFN3333B-8L/MOS/DFN/NFET-40FQMN//PJ/DFN3333B8L-AS01/PJQ4848P-ASC8/DFN33338L-AS01 |
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PJQ4848P_R2_00001 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 37A; Idm: 120A; 39.6W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 37A Pulsed drain current: 120A Power dissipation: 39.6W Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |