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PJQ5431E-AU_R2_006A1

PJQ5431E-AU_R2_006A1 Panjit

PJQ5431E_AU-3239175.pdf Hersteller: Panjit
MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Lieferzeit 10-14 Tag (e)
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2+2.64 EUR
10+1.85 EUR
100+1.28 EUR
500+1.02 EUR
1000+0.93 EUR
3000+0.82 EUR
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Technische Details PJQ5431E-AU_R2_006A1 Panjit

Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 86A (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V, Power Dissipation (Max): 3.3W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V, Qualification: AEC-Q101.

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PJQ5431E-AU_R2_006A1 PJQ5431E-AU_R2_006A1 Hersteller : Panjit International Inc. PJQ5431E-AU.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2598 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+1.89 EUR
100+1.29 EUR
500+1.03 EUR
1000+0.95 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5431E-AU_R2_006A1 PJQ5431E-AU_R2_006A1 Hersteller : Panjit International Inc. PJQ5431E-AU.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Qualification: AEC-Q101
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