PJQ5472A_R2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Technische Details PJQ5472A_R2_00001 Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Supplier Device Package: DFN5060-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 41W (Tc), Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Weitere Produktangebote PJQ5472A_R2_00001
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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PJQ5472A_R2_00001 | Panjit |
MOSFET 100V N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PJQ5472A_R2_00001 |
|
Hersteller: Panjit
MOSFET 100V N-Channel Enhancement Mode MOSFET
MOSFET 100V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH