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PJQ5544-AU_R2_002A1

PJQ5544-AU_R2_002A1 PanJit Semiconductor


PJQ5544-AU.pdf Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1952 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
36+1.99 EUR
54+1.35 EUR
122+0.59 EUR
129+0.56 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PJQ5544-AU_R2_002A1 PanJit Semiconductor

Description: 40V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, Power Dissipation (Max): 3.3W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 50µA, Supplier Device Package: DFN5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote PJQ5544-AU_R2_002A1 nach Preis ab 0.56 EUR bis 2.96 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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PJQ5544-AU_R2_002A1 PJQ5544-AU_R2_002A1 Hersteller : PanJit Semiconductor PJQ5544-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1952 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
54+1.35 EUR
122+0.59 EUR
129+0.56 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544-AU_R2_002A1 PJQ5544-AU_R2_002A1 Hersteller : Panjit PJQ5544_AU-3162107.pdf MOSFETs 40V N-Channel Enhancement Mode MOSFET
auf Bestellung 3399 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.96 EUR
10+2.08 EUR
100+1.47 EUR
500+1.17 EUR
1000+1.07 EUR
3000+0.97 EUR
6000+0.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544-AU_R2_002A1 PJQ5544-AU_R2_002A1 Hersteller : Panjit International Inc. PJQ5544-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+2 EUR
100+1.42 EUR
500+1.2 EUR
1000+1.1 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544-AU_R2_002A1 PJQ5544-AU_R2_002A1 Hersteller : Panjit International Inc. PJQ5544-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544-AU-R2-002A1 PJQ5544-AU-R2-002A1 Hersteller : Panjit MOSFETs DFN5060-8L/MOS/DFN/NFET-40FKMN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH