auf Bestellung 2780 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.64 EUR |
| 10+ | 1.34 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.76 EUR |
| 3000+ | 0.64 EUR |
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Technische Details PJQ5546V-AU_R2_002A1 Panjit
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V, Power Dissipation (Max): 3.3W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 50µA, Supplier Device Package: DFN5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote PJQ5546V-AU_R2_002A1 nach Preis ab 0.73 EUR bis 1.67 EUR
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PJQ5546V-AU_R2_002A1 | Hersteller : Panjit International Inc. |
 Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2975 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5546V-AU_R2_002A1 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W Application: automotive industry Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 316A Mounting: SMD Drain-source voltage: 40V Drain current: 79A On-state resistance: 7.3mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PJQ5546V-AU_R2_002A1 | Hersteller : Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| PJQ5546V-AU_R2_002A1 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W Application: automotive industry Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 316A Mounting: SMD Drain-source voltage: 40V Drain current: 79A On-state resistance: 7.3mΩ |
Produkt ist nicht verfügbar |