Produkte > PANJIT > PJQ5546V-AU_R2_002A1
PJQ5546V-AU_R2_002A1

PJQ5546V-AU_R2_002A1 Panjit

PJQ5546V_AU.pdf Hersteller: Panjit
MOSFETs 40V N-Channel Enhancement Mode MOSFET
auf Bestellung 2780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.94 EUR
10+1.3 EUR
100+0.9 EUR
500+0.79 EUR
1000+0.77 EUR
3000+0.59 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PJQ5546V-AU_R2_002A1 Panjit

Description: 40V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V, Power Dissipation (Max): 3.3W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 50µA, Supplier Device Package: DFN5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote PJQ5546V-AU_R2_002A1 nach Preis ab 0.77 EUR bis 2.15 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PJQ5546V-AU_R2_002A1 PJQ5546V-AU_R2_002A1 Hersteller : Panjit International Inc. PJQ5546V-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
13+1.44 EUR
100+1 EUR
500+0.84 EUR
1000+0.77 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5546V-AU_R2_002A1 PJQ5546V-AU_R2_002A1 Hersteller : Panjit International Inc. PJQ5546V-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5546V-AU_R2_002A1 PJQ5546V-AU_R2_002A1 Hersteller : PanJit Semiconductor PJQ5546V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH