PJQ5839E-AU_R2_002A1 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 30V DUAL P-CHANNEL ENHANCEMENT M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.06 EUR |
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Technische Details PJQ5839E-AU_R2_002A1 Panjit International Inc.
Description: 30V DUAL P-CHANNEL ENHANCEMENT M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 P-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W (Ta), 30W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 31A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V, Rds On (Max) @ Id, Vgs: 19.1mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN5060B-8, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PJQ5839E-AU_R2_002A1 nach Preis ab 1.03 EUR bis 2.6 EUR
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PJQ5839E-AU_R2_002A1 | Hersteller : Panjit International Inc. |
Description: 30V DUAL P-CHANNEL ENHANCEMENT M Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 31A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V Rds On (Max) @ Id, Vgs: 19.1mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJQ5839E-AU_R2_002A1 | Hersteller : Panjit |
MOSFET 30V Dual P-Channel Enhancement Mode MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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