PJQ5866A_R2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: 60V DUAL N-CHANNEL ENHANCEMENT M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta), 56W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1574pF @ 25V
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060B-8
Part Status: Active
Description: 60V DUAL N-CHANNEL ENHANCEMENT M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta), 56W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1574pF @ 25V
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060B-8
Part Status: Active
auf Bestellung 2794 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.53 EUR |
13+ | 1.37 EUR |
100+ | 1.07 EUR |
500+ | 0.88 EUR |
1000+ | 0.7 EUR |
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Technische Details PJQ5866A_R2_00001 Panjit International Inc.
Description: 60V DUAL N-CHANNEL ENHANCEMENT M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W (Ta), 56W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 40A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1574pF @ 25V, Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN5060B-8, Part Status: Active.
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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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PJQ5866A_R2_00001 | Hersteller : Panjit International Inc. |
Description: 60V DUAL N-CHANNEL ENHANCEMENT M Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 56W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1574pF @ 25V Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 Part Status: Active |
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