PJS6421_S1_00001 PanJit Semiconductor
Hersteller: PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -29.6A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.4A
Pulsed drain current: -29.6A
Power dissipation: 2W
Gate-source voltage: ±10V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2970 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 218+ | 0.33 EUR |
| 274+ | 0.26 EUR |
| 486+ | 0.15 EUR |
| 516+ | 0.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PJS6421_S1_00001 PanJit Semiconductor
Description: 20V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V.
Weitere Produktangebote PJS6421_S1_00001 nach Preis ab 0.14 EUR bis 0.79 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
PJS6421_S1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -29.6A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -7.4A Pulsed drain current: -29.6A Power dissipation: 2W Gate-source voltage: ±10V On-state resistance: 40mΩ Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2970 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
PJS6421_S1_00001 | Hersteller : Panjit |
MOSFETs 20V P-Channel Enhancement Mode MOSFET |
auf Bestellung 36254 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
PJS6421_S1_00001 | Hersteller : Panjit International Inc. |
Description: 20V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V |
auf Bestellung 2127 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
PJS6421_S1_00001 | Hersteller : Panjit International Inc. |
Description: 20V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
PJS6421-S1-00001 | Hersteller : Panjit |
MOSFETs SOT23 P CHAN 20V |
Produkt ist nicht verfügbar |