PJS6601_S1_00001 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SOT23-6
Polarisation: unipolar
Gate charge: 4.6/5.4nC
On-state resistance: 95/190mΩ
Power dissipation: 1.25W
Drain current: 4.1/-3.1A
Gate-source voltage: ±12V
Drain-source voltage: 20/-20V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SOT23-6
Polarisation: unipolar
Gate charge: 4.6/5.4nC
On-state resistance: 95/190mΩ
Power dissipation: 1.25W
Drain current: 4.1/-3.1A
Gate-source voltage: ±12V
Drain-source voltage: 20/-20V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2689 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 217+ | 0.33 EUR |
| 285+ | 0.25 EUR |
| 556+ | 0.13 EUR |
| 589+ | 0.12 EUR |
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Technische Details PJS6601_S1_00001 PanJit Semiconductor
Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N/P-MOSFET, Case: SOT23-6, Polarisation: unipolar, Gate charge: 4.6/5.4nC, On-state resistance: 95/190mΩ, Power dissipation: 1.25W, Drain current: 4.1/-3.1A, Gate-source voltage: ±12V, Drain-source voltage: 20/-20V, Kind of package: reel; tape, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote PJS6601_S1_00001 nach Preis ab 0.12 EUR bis 1.08 EUR
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PJS6601_S1_00001 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W Kind of channel: enhancement Mounting: SMD Type of transistor: N/P-MOSFET Case: SOT23-6 Polarisation: unipolar Gate charge: 4.6/5.4nC On-state resistance: 95/190mΩ Power dissipation: 1.25W Drain current: 4.1/-3.1A Gate-source voltage: ±12V Drain-source voltage: 20/-20V Kind of package: reel; tape |
auf Bestellung 2689 Stücke: Lieferzeit 14-21 Tag (e) |
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PJS6601_S1_00001 | Hersteller : Panjit |
 MOSFETs 20V Complementary Enhancement Mode MOSFET |
auf Bestellung 4749 Stücke: Lieferzeit 10-14 Tag (e) |
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PJS6601-S1-00001 | Hersteller : Panjit |
MOSFET |
Produkt ist nicht verfügbar |