PJS6601_S1_00001 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Case: SOT23-6
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.6/5.4nC
On-state resistance: 95/190mΩ
Power dissipation: 1.25W
| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 234+ | 0.31 EUR |
| 307+ | 0.23 EUR |
| 345+ | 0.21 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
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Technische Details PJS6601_S1_00001 PanJit Semiconductor
Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W, Type of transistor: N/P-MOSFET, Polarisation: unipolar, Drain-source voltage: 20/-20V, Drain current: 4.1/-3.1A, Case: SOT23-6, Gate-source voltage: ±12V, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 4.6/5.4nC, On-state resistance: 95/190mΩ, Power dissipation: 1.25W.
Weitere Produktangebote PJS6601_S1_00001 nach Preis ab 0.22 EUR bis 1.03 EUR
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PJS6601_S1_00001 | Hersteller : Panjit |
 MOSFETs 20V Complementary Enhancement Mode MOSFET |
auf Bestellung 4259 Stücke: Lieferzeit 10-14 Tag (e) |
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PJS6601-S1-00001 | Hersteller : Panjit |
MOSFET |
Produkt ist nicht verfügbar |