PJS6601_S1_00001 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.6/5.4nC
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.6/5.4nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2626 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 217+ | 0.33 EUR |
| 285+ | 0.25 EUR |
| 556+ | 0.13 EUR |
| 589+ | 0.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PJS6601_S1_00001 PanJit Semiconductor
Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W, Type of transistor: N/P-MOSFET, Polarisation: unipolar, Drain-source voltage: 20/-20V, Drain current: 4.1/-3.1A, Power dissipation: 1.25W, Case: SOT23-6, Gate-source voltage: ±12V, On-state resistance: 95/190mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 4.6/5.4nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote PJS6601_S1_00001 nach Preis ab 0.12 EUR bis 0.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
PJS6601_S1_00001 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 4.1/-3.1A Power dissipation: 1.25W Case: SOT23-6 Gate-source voltage: ±12V On-state resistance: 95/190mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4.6/5.4nC |
auf Bestellung 2626 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
PJS6601_S1_00001 | Hersteller : Panjit |
 MOSFET 20V Complementary Enhancement Mode MOSFET |
auf Bestellung 5191 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
PJS6601-S1-00001 | Hersteller : Panjit |
MOSFET |
Produkt ist nicht verfügbar |