| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.09 EUR |
| 10+ | 0.67 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.25 EUR |
| 6000+ | 0.24 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3 Stücke
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Technische Details PJS6601_S1_00001 Panjit
Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W, Type of transistor: N/P-MOSFET, Polarisation: unipolar, Drain-source voltage: 20/-20V, Drain current: 4.1/-3.1A, Power dissipation: 1.25W, Case: SOT23-6, Gate-source voltage: ±12V, On-state resistance: 95/190mΩ, Mounting: SMD, Kind of channel: enhancement, Kind of package: reel; tape, Gate charge: 4.6/5.4nC.
Weitere Produktangebote PJS6601_S1_00001
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
PJS6601_S1_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 4.1/-3.1A Power dissipation: 1.25W Case: SOT23-6 Gate-source voltage: ±12V On-state resistance: 95/190mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Gate charge: 4.6/5.4nC |
auf Bestellung 2576 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PJS6601_S1_00001 |
Hersteller: PanJit
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 4.6/5.4nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 4.6/5.4nC
auf Bestellung 2576 Stücke:
Lieferzeit 14-21 Tag (e)