PJS6601_S1_00001 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.25W
Gate charge: 4.6/5.4nC
Polarisation: unipolar
Drain current: 4.1/-3.1A
Kind of channel: enhancement
Drain-source voltage: 20/-20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
| Anzahl | Privatkunde |
|---|---|
| 162+ | 0.52 EUR |
| 234+ | 0.37 EUR |
| 307+ | 0.27 EUR |
| 345+ | 0.25 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
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Technische Details PJS6601_S1_00001 PanJit Semiconductor
Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W, Case: SOT23-6, Mounting: SMD, Kind of package: reel; tape, Power dissipation: 1.25W, Gate charge: 4.6/5.4nC, Polarisation: unipolar, Drain current: 4.1/-3.1A, Kind of channel: enhancement, Drain-source voltage: 20/-20V, Type of transistor: N/P-MOSFET, Gate-source voltage: ±12V, On-state resistance: 95/190mΩ.
Weitere Produktangebote PJS6601_S1_00001 nach Preis ab 0.26 EUR bis 1.23 EUR
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PJS6601_S1_00001 | Panjit |
 MOSFETs 20V Complementary Enhancement Mode MOSFET |
auf Bestellung 4259 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJS6601_S1_00001 |
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Hersteller: Panjit
MOSFETs 20V Complementary Enhancement Mode MOSFET
MOSFETs 20V Complementary Enhancement Mode MOSFET
auf Bestellung 4259 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.23 EUR |
| 10+ | 0.75 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |
| 3000+ | 0.29 EUR |
| 6000+ | 0.26 EUR |