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PJS6603_S2_00001

PJS6603_S2_00001 Panjit International Inc.


PJS6603.pdf Hersteller: Panjit International Inc.
Description: MOSFET N/P-CH 30V 4.4A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 2.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 396pF @ 15V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, 9.8nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.26 EUR
Mindestbestellmenge: 10000
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Technische Details PJS6603_S2_00001 Panjit International Inc.

Description: MOSFET N/P-CH 30V 4.4A SOT23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 2.9A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 396pF @ 15V, Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, 9.8nC @ 10V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-23-6, Part Status: Active.

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PJS6603_S2_00001 PJS6603_S2_00001 Hersteller : Panjit International Inc. PJS6603.pdf Description: MOSFET N/P-CH 30V 4.4A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 2.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 396pF @ 15V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, 9.8nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
auf Bestellung 34847 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
23+0.78 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
2000+0.31 EUR
5000+0.28 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
PJS6603_S2_00001 PJS6603_S2_00001 Hersteller : Panjit PJS6603-1871471.pdf MOSFETs 30V Complementary Enhancement Mode MOSFET
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PJS6603-S2-00001 PJS6603-S2-00001 Hersteller : Panjit PJS6603-1871471.pdf MOSFETs SOT23 DUAL CHAN 30V
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