PJS6603_S2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: MOSFET N/P-CH 30V 4.4A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 2.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 396pF @ 15V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, 9.8nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.31 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
10000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details PJS6603_S2_00001 Panjit International Inc.
Description: MOSFET N/P-CH 30V 4.4A SOT23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 2.9A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 396pF @ 15V, Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, 9.8nC @ 10V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-23-6, Part Status: Active.
Weitere Produktangebote PJS6603_S2_00001 nach Preis ab 0.33 EUR bis 1.51 EUR
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PJS6603_S2_00001 | Panjit International Inc. |
Description: MOSFET N/P-CH 30V 4.4A SOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 2.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 396pF @ 15V Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, 9.8nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-6 Part Status: Active |
auf Bestellung 34847 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PJS6603_S2_00001 |
|
Hersteller: Panjit International Inc.
Description: MOSFET N/P-CH 30V 4.4A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 2.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 396pF @ 15V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, 9.8nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Description: MOSFET N/P-CH 30V 4.4A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 2.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 396pF @ 15V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, 9.8nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
auf Bestellung 34847 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.51 EUR |
| 23+ | 0.93 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.42 EUR |
| 2000+ | 0.37 EUR |
| 5000+ | 0.33 EUR |