PJS6603_S2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: MOSFET N/P-CH 30V 4.4A SOT23-6
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, 9.8nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 396pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 2.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
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Technische Details PJS6603_S2_00001 Panjit International Inc.
Description: MOSFET N/P-CH 30V 4.4A SOT23-6, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, 9.8nC @ 10V, Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 396pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 2.9A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 1.25W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: SOT-23-6, Part Status: Active, Supplier Device Package: SOT-23-6, Vgs(th) (Max) @ Id: 2.1V @ 250µA.
Weitere Produktangebote PJS6603_S2_00001 nach Preis ab 0.28 EUR bis 1.27 EUR
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PJS6603_S2_00001 | Panjit International Inc. |
Description: MOSFET N/P-CH 30V 4.4A SOT23-6 Part Status: Active Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, 9.8nC @ 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 396pF @ 15V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 2.9A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.25W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 34847 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJS6603_S2_00001 |
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Hersteller: Panjit International Inc.
Description: MOSFET N/P-CH 30V 4.4A SOT23-6
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, 9.8nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 396pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 2.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 30V 4.4A SOT23-6
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, 9.8nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 396pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 2.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 34847 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.27 EUR |
| 23+ | 0.78 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| 2000+ | 0.31 EUR |
| 5000+ | 0.28 EUR |