PJS6816_S1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
auf Bestellung 4494 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 0.67 EUR |
| 31+ | 0.58 EUR |
| 100+ | 0.40 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.25 EUR |
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Technische Details PJS6816_S1_00001 Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V, Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23-6.
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Description: 20V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-6 |
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