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PJS6816_S1_00001

PJS6816_S1_00001 Panjit International Inc.

PJS6816.pdf
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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Technische Details PJS6816_S1_00001 Panjit International Inc.

Description: 20V N-CHANNEL ENHANCEMENT MODE M, Supplier Device Package: SOT-23-6, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 1.25W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR).

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PJS6816_S1_00001 PJS6816_S1_00001 Panjit International Inc. PJS6816.pdf Description: 20V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJS6816_S1_00001 PJS6816_S1_00001 Panjit PJS6816-1871373.pdf MOSFET 20V N-Channel Enhancement Mode MOSFET
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PJS6816-S1-00001 Panjit MOSFET
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PJS6816_S1_00001 PJS6816.pdf
PJS6816_S1_00001
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJS6816_S1_00001 PJS6816-1871373.pdf
PJS6816_S1_00001
Hersteller: Panjit
MOSFET 20V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJS6816-S1-00001
Hersteller: Panjit
MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH