PJSD03LCFN2_R1_00501 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Capacitance: 25pF
Leakage current: 2.5µA
Max. forward impulse current: 6A
Number of channels: 1
Breakdown voltage: 5.4V
Category: Protection diodes - arrays
Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Capacitance: 25pF
Leakage current: 2.5µA
Max. forward impulse current: 6A
Number of channels: 1
Breakdown voltage: 5.4V
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Technische Details PJSD03LCFN2_R1_00501 PanJit Semiconductor
Category: Protection diodes - arrays, Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1, Type of diode: TVS, Case: DFN1006-2, Mounting: SMD, Max. off-state voltage: 3.3V, Semiconductor structure: bidirectional, Capacitance: 25pF, Leakage current: 2.5µA, Max. forward impulse current: 6A, Number of channels: 1, Breakdown voltage: 5.4V.