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Technische Details PJSD05CFN2-R1-00501 Panjit
Category: Protection diodes - arrays, Description: Diode: TVS; 6V; 15A; bidirectional; DFN1006-2; Ch: 1, Semiconductor structure: bidirectional, Case: DFN1006-2, Mounting: SMD, Type of diode: TVS, Capacitance: 70pF, Leakage current: 1µA, Number of channels: 1, Max. forward impulse current: 15A, Max. off-state voltage: 5V, Breakdown voltage: 6V.
Weitere Produktangebote PJSD05CFN2-R1-00501
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| PJSD05CFN2_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 15A; bidirectional; DFN1006-2; Ch: 1 Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Type of diode: TVS Capacitance: 70pF Leakage current: 1µA Number of channels: 1 Max. forward impulse current: 15A Max. off-state voltage: 5V Breakdown voltage: 6V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PJSD05CFN2_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 15A; bidirectional; DFN1006-2; Ch: 1
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Capacitance: 70pF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 15A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 15A; bidirectional; DFN1006-2; Ch: 1
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Capacitance: 70pF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 15A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH