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PJSD05CTM-R1-00001 Panjit


Hersteller: Panjit
ESD Protection Diodes / TVS Diodes
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Technische Details PJSD05CTM-R1-00001 Panjit

Category: Protection diodes - arrays, Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1, Semiconductor structure: bidirectional, Case: SOD923, Mounting: SMD, Type of diode: TVS, Capacitance: 30pF, Leakage current: 1µA, Number of channels: 1, Max. forward impulse current: 1A, Max. off-state voltage: 5V, Breakdown voltage: 5.78V, Peak pulse power dissipation: 0.1kW.

Weitere Produktangebote PJSD05CTM-R1-00001

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
PJSD05CTM_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Type of diode: TVS
Capacitance: 30pF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 5.78V
Peak pulse power dissipation: 0.1kW
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJSD05CTM_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Type of diode: TVS
Capacitance: 30pF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 5.78V
Peak pulse power dissipation: 0.1kW
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH