PJT138K-AU_R1_000A1 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Pulsed drain current: 1.2A
Power dissipation: 0.236W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
| Anzahl | Privatkunde |
|---|---|
| 239+ | 0.36 EUR |
| 394+ | 0.21 EUR |
| 656+ | 0.13 EUR |
| 903+ | 0.094 EUR |
| 1000+ | 0.088 EUR |
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Technische Details PJT138K-AU_R1_000A1 PanJit Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 50V, Drain current: 0.36A, Pulsed drain current: 1.2A, Power dissipation: 0.236W, Case: SOT363, Gate-source voltage: ±20V, On-state resistance: 4.5Ω, Mounting: SMD, Gate charge: 1nC, Kind of package: reel; tape, Kind of channel: enhancement, Application: automotive industry.
Weitere Produktangebote PJT138K-AU_R1_000A1 nach Preis ab 0.083 EUR bis 0.5 EUR
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PJT138K-AU_R1_000A1 | Panjit |
 MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected |
auf Bestellung 12318 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJT138K-AU_R1_000A1 |
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Hersteller: Panjit
MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 12318 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.5 EUR |
| 11+ | 0.31 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| 3000+ | 0.09 EUR |
| 9000+ | 0.083 EUR |