PJT138K-AU_R1_000A1 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Mounting: SMD
Case: SOT363
Polarisation: unipolar
Gate charge: 1nC
Power dissipation: 0.236W
Drain current: 0.36A
Pulsed drain current: 1.2A
On-state resistance: 4.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 50V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Mounting: SMD
Case: SOT363
Polarisation: unipolar
Gate charge: 1nC
Power dissipation: 0.236W
Drain current: 0.36A
Pulsed drain current: 1.2A
On-state resistance: 4.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 50V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 394+ | 0.18 EUR |
| 656+ | 0.11 EUR |
| 903+ | 0.079 EUR |
| 1000+ | 0.075 EUR |
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Technische Details PJT138K-AU_R1_000A1 PanJit Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW, Mounting: SMD, Case: SOT363, Polarisation: unipolar, Gate charge: 1nC, Power dissipation: 0.236W, Drain current: 0.36A, Pulsed drain current: 1.2A, On-state resistance: 4.5Ω, Gate-source voltage: ±20V, Drain-source voltage: 50V, Application: automotive industry, Kind of channel: enhancement, Type of transistor: N-MOSFET x2, Kind of package: reel; tape, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote PJT138K-AU_R1_000A1 nach Preis ab 0.07 EUR bis 0.42 EUR
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PJT138K-AU_R1_000A1 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW Mounting: SMD Case: SOT363 Polarisation: unipolar Gate charge: 1nC Power dissipation: 0.236W Drain current: 0.36A Pulsed drain current: 1.2A On-state resistance: 4.5Ω Gate-source voltage: ±20V Drain-source voltage: 50V Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET x2 Kind of package: reel; tape |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJT138K-AU_R1_000A1 | Hersteller : Panjit |
 MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected |
auf Bestellung 12318 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJT138K-AU_R1_000A1 | Hersteller : Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
Produkt ist nicht verfügbar |
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| PJT138K-AU_R1_000A1 | Hersteller : Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
Produkt ist nicht verfügbar |