PJT138K-AU_R1_000A1 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.36A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET x2
Power dissipation: 236mW
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.36A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET x2
Power dissipation: 236mW
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 360+ | 0.2 EUR |
| 650+ | 0.11 EUR |
| 725+ | 0.099 EUR |
| 880+ | 0.082 EUR |
| 930+ | 0.077 EUR |
| 9000+ | 0.074 EUR |
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Technische Details PJT138K-AU_R1_000A1 PanJit Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW, Case: SOT363, Mounting: SMD, Kind of package: reel; tape, Application: automotive industry, Gate charge: 1nC, Gate-source voltage: ±20V, Pulsed drain current: 1.2A, Kind of channel: enhanced, Drain-source voltage: 50V, Drain current: 0.36A, On-state resistance: 4.5Ω, Type of transistor: N-MOSFET x2, Power dissipation: 236mW, Polarisation: unipolar, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote PJT138K-AU_R1_000A1 nach Preis ab 0.077 EUR bis 0.69 EUR
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PJT138K-AU_R1_000A1 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW Case: SOT363 Mounting: SMD Kind of package: reel; tape Application: automotive industry Gate charge: 1nC Gate-source voltage: ±20V Pulsed drain current: 1.2A Kind of channel: enhanced Drain-source voltage: 50V Drain current: 0.36A On-state resistance: 4.5Ω Type of transistor: N-MOSFET x2 Power dissipation: 236mW Polarisation: unipolar |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJT138K-AU_R1_000A1 | Hersteller : Panjit |
 MOSFET 50V N-Channel Enhancement Mode MOSFETESD Protected |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJT138K-AU_R1_000A1 | Hersteller : Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
Produkt ist nicht verfügbar |
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| PJT138K-AU_R1_000A1 | Hersteller : Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
Produkt ist nicht verfügbar |