PJT138K-AU_R1_000A1 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.236W
Polarisation: unipolar
Gate charge: 1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 50V
Drain current: 0.36A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.236W
Polarisation: unipolar
Gate charge: 1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 50V
Drain current: 0.36A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 290+ | 0.25 EUR |
| 479+ | 0.15 EUR |
| 869+ | 0.082 EUR |
| 893+ | 0.08 EUR |
| 918+ | 0.078 EUR |
| 1000+ | 0.075 EUR |
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Technische Details PJT138K-AU_R1_000A1 PanJit Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW, Mounting: SMD, Case: SOT363, Kind of package: reel; tape, Application: automotive industry, Power dissipation: 0.236W, Polarisation: unipolar, Gate charge: 1nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 1.2A, Drain-source voltage: 50V, Drain current: 0.36A, On-state resistance: 4.5Ω, Type of transistor: N-MOSFET x2, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote PJT138K-AU_R1_000A1 nach Preis ab 0.063 EUR bis 0.32 EUR
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PJT138K-AU_R1_000A1 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW Mounting: SMD Case: SOT363 Kind of package: reel; tape Application: automotive industry Power dissipation: 0.236W Polarisation: unipolar Gate charge: 1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1.2A Drain-source voltage: 50V Drain current: 0.36A On-state resistance: 4.5Ω Type of transistor: N-MOSFET x2 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJT138K-AU_R1_000A1 | Hersteller : Panjit |
 MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected |
auf Bestellung 15243 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJT138K-AU_R1_000A1 | Hersteller : Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
Produkt ist nicht verfügbar |
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| PJT138K-AU_R1_000A1 | Hersteller : Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
Produkt ist nicht verfügbar |