PJT7600_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 20V COMPLEMENTARY ENHANCEMENT MO
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.21 EUR |
| 6000+ | 0.20 EUR |
| 9000+ | 0.18 EUR |
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Technische Details PJT7600_R1_00001 Panjit International Inc.
Description: 20V COMPLEMENTARY ENHANCEMENT MO, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V, Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote PJT7600_R1_00001 nach Preis ab 0.09 EUR bis 0.77 EUR
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PJT7600_R1_00001 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW Case: SOT363 Drain-source voltage: 20/-20V Drain current: 1A/-700mA On-state resistance: 400/600mΩ Type of transistor: N/P-MOSFET Power dissipation: 0.35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.6/2.2nC Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2695 Stücke: Lieferzeit 7-14 Tag (e) |
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PJT7600_R1_00001 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW Case: SOT363 Drain-source voltage: 20/-20V Drain current: 1A/-700mA On-state resistance: 400/600mΩ Type of transistor: N/P-MOSFET Power dissipation: 0.35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.6/2.2nC Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD |
auf Bestellung 2695 Stücke: Lieferzeit 14-21 Tag (e) |
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PJT7600_R1_00001 | Hersteller : Panjit International Inc. |
Description: 20V COMPLEMENTARY ENHANCEMENT MO Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 13124 Stücke: Lieferzeit 10-14 Tag (e) |
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PJT7600_R1_00001 | Hersteller : Panjit |
MOSFETs 20V Complementary Enhancement Mode MOSFETESD Protected |
auf Bestellung 12648 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJT7600_R1_00001 | Hersteller : PanJit |
PJT7600_R1_00001 |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJT7600-R1-00001 | Hersteller : Panjit |
MOSFET SOT-363/MOS/SOT/NFET-20TSNP |
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