PJT7600_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: 20V COMPLEMENTARY ENHANCEMENT MO
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.25 EUR |
| 6000+ | 0.24 EUR |
| 9000+ | 0.21 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details PJT7600_R1_00001 Panjit International Inc.
Description: 20V COMPLEMENTARY ENHANCEMENT MO, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V, Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote PJT7600_R1_00001 nach Preis ab 0.2 EUR bis 0.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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PJT7600_R1_00001 | Panjit International Inc. |
Description: 20V COMPLEMENTARY ENHANCEMENT MO Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 13124 Stücke: Lieferzeit 10-14 Tag (e) |
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PJT7600_R1_00001 | Panjit |
MOSFETs 20V Complementary Enhancement Mode MOSFETESD Protected |
auf Bestellung 3484 Stücke: Lieferzeit 10-14 Tag (e) |
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PJT7600_R1_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 1A/-700mA Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±8V On-state resistance: 400/600mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Gate charge: 1.6/2.2nC |
auf Bestellung 2680 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJT7600_R1_00001 | PanJit |
PJT7600_R1_00001 |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| PJT7600_R1_00001 |
|
Hersteller: Panjit International Inc.
Description: 20V COMPLEMENTARY ENHANCEMENT MO
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: 20V COMPLEMENTARY ENHANCEMENT MO
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 13124 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 0.9 EUR |
| 30+ | 0.71 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.27 EUR |
| PJT7600_R1_00001 |
|
Hersteller: Panjit
MOSFETs 20V Complementary Enhancement Mode MOSFETESD Protected
MOSFETs 20V Complementary Enhancement Mode MOSFETESD Protected
auf Bestellung 3484 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.98 EUR |
| 10+ | 0.61 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.26 EUR |
| 3000+ | 0.21 EUR |
| 6000+ | 0.2 EUR |
| PJT7600_R1_00001 |
|
Hersteller: PanJit
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 400/600mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 1.6/2.2nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 400/600mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 1.6/2.2nC
auf Bestellung 2680 Stücke:
Lieferzeit 14-21 Tag (e)
| PJT7600_R1_00001 |
|
Hersteller: PanJit
PJT7600_R1_00001
PJT7600_R1_00001
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.38 EUR |