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PJT7600_R1_00001

PJT7600_R1_00001 Panjit International Inc.

PJT7600.pdf
Hersteller: Panjit International Inc.
Description: 20V COMPLEMENTARY ENHANCEMENT MO
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.21 EUR
6000+0.2 EUR
9000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
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Technische Details PJT7600_R1_00001 Panjit International Inc.

Description: 20V COMPLEMENTARY ENHANCEMENT MO, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V, Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.

Weitere Produktangebote PJT7600_R1_00001 nach Preis ab 0.13 EUR bis 0.92 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
PJT7600_R1_00001 PJT7600_R1_00001 PanJit Semiconductor PJT7600.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Gate charge: 1.6/2.2nC
On-state resistance: 400/600mΩ
Power dissipation: 0.35W
Gate-source voltage: ±8V
auf Bestellung 2685 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
226+0.32 EUR
358+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 139 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7600_R1_00001 PJT7600_R1_00001 Panjit International Inc. PJT7600.pdf Description: 20V COMPLEMENTARY ENHANCEMENT MO
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 13124 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
30+0.6 EUR
100+0.36 EUR
500+0.33 EUR
1000+0.23 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7600_R1_00001 PJT7600_R1_00001 Panjit 1C7A12FFECC9DB1FD59F00DF723F70D274DEC02EB11C6FC02B2C9F90CCA335F0.pdf MOSFETs 20V Complementary Enhancement Mode MOSFETESD Protected
auf Bestellung 3484 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.92 EUR
10+0.57 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.24 EUR
3000+0.21 EUR
6000+0.19 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7600_R1_00001 PJT7600.pdf
PJT7600_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Gate charge: 1.6/2.2nC
On-state resistance: 400/600mΩ
Power dissipation: 0.35W
Gate-source voltage: ±8V
auf Bestellung 2685 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
139+0.51 EUR
226+0.32 EUR
358+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 139 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7600_R1_00001 PJT7600.pdf
PJT7600_R1_00001
Hersteller: Panjit International Inc.
Description: 20V COMPLEMENTARY ENHANCEMENT MO
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 13124 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
24+0.76 EUR
30+0.6 EUR
100+0.36 EUR
500+0.33 EUR
1000+0.23 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7600_R1_00001 1C7A12FFECC9DB1FD59F00DF723F70D274DEC02EB11C6FC02B2C9F90CCA335F0.pdf
PJT7600_R1_00001
Hersteller: Panjit
MOSFETs 20V Complementary Enhancement Mode MOSFETESD Protected
auf Bestellung 3484 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+0.92 EUR
10+0.57 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.24 EUR
3000+0.21 EUR
6000+0.19 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH