PJT7800_R1_00001 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4A
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 596+ | 0.12 EUR |
| 650+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| 1000+ | 0.092 EUR |
| 3000+ | 0.09 EUR |
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Produktbewertung abgeben
Technische Details PJT7800_R1_00001 PanJit Semiconductor
Description: MOSFET 2N-CH 20V 1A SOT363, Part Status: Active, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 350mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote PJT7800_R1_00001 nach Preis ab 0.14 EUR bis 0.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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PJT7800_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 1A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJT7800_R1_00001 | Panjit |
MOSFET 20V N-Channel Enhancement Mode MOSFETESD Protected |
auf Bestellung 12960 Stücke: Lieferzeit 10-14 Tag (e) |
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PJT7800_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 1A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 16525 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJT7800_R1_00001 |
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Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 1A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 1A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.18 EUR |
| 9000+ | 0.16 EUR |
| PJT7800_R1_00001 |
|
Hersteller: Panjit
MOSFET 20V N-Channel Enhancement Mode MOSFETESD Protected
MOSFET 20V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 12960 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.8 EUR |
| 10+ | 0.6 EUR |
| 100+ | 0.37 EUR |
| 1000+ | 0.2 EUR |
| 3000+ | 0.17 EUR |
| 9000+ | 0.15 EUR |
| 24000+ | 0.14 EUR |
| PJT7800_R1_00001 |
|
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 1A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 1A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 16525 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 0.81 EUR |
| 31+ | 0.58 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.2 EUR |