PJT7800_R1_00001 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Case: SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 1.6nC
Power dissipation: 0.35W
On-state resistance: 0.4Ω
Drain current: 1A
Pulsed drain current: 4A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: reel; tape
| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 596+ | 0.12 EUR |
| 650+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| 1000+ | 0.092 EUR |
| 3000+ | 0.09 EUR |
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Produktbewertung abgeben
Technische Details PJT7800_R1_00001 PanJit Semiconductor
Description: MOSFET 2N-CH 20V 1A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote PJT7800_R1_00001 nach Preis ab 0.14 EUR bis 0.81 EUR
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PJT7800_R1_00001 | Hersteller : Panjit International Inc. |
Description: MOSFET 2N-CH 20V 1A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJT7800_R1_00001 | Hersteller : Panjit |
MOSFET 20V N-Channel Enhancement Mode MOSFETESD Protected |
auf Bestellung 12960 Stücke: Lieferzeit 10-14 Tag (e) |
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PJT7800_R1_00001 | Hersteller : Panjit International Inc. |
Description: MOSFET 2N-CH 20V 1A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 16525 Stücke: Lieferzeit 10-14 Tag (e) |
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