PJT7800_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: MOSFET 2N-CH 20V 1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.18 EUR |
| 9000+ | 0.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PJT7800_R1_00001 Panjit International Inc.
Description: MOSFET 2N-CH 20V 1A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote PJT7800_R1_00001 nach Preis ab 0.14 EUR bis 0.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PJT7800_R1_00001 | Hersteller : Panjit |
MOSFET 20V N-Channel Enhancement Mode MOSFETESD Protected |
auf Bestellung 12960 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
PJT7800_R1_00001 | Hersteller : Panjit International Inc. |
Description: MOSFET 2N-CH 20V 1A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 16525 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
PJT7800_R1_00001 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1A Pulsed drain current: 4A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±8V On-state resistance: 0.4Ω Mounting: SMD Gate charge: 1.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
PJT7800_R1_00001 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1A Pulsed drain current: 4A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±8V On-state resistance: 0.4Ω Mounting: SMD Gate charge: 1.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |