PJT7801_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: MOSFET 2P-CH 20V 0.7A SOT363
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
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Technische Details PJT7801_R1_00001 Panjit International Inc.
Description: MOSFET 2P-CH 20V 0.7A SOT363, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V, Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 350mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount.
Weitere Produktangebote PJT7801_R1_00001 nach Preis ab 0.089 EUR bis 0.81 EUR
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PJT7801_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW Mounting: SMD Case: SOT363 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -2.8A Drain current: -0.7A Gate charge: 2.2nC On-state resistance: 0.6Ω Power dissipation: 0.35W Gate-source voltage: ±8V |
auf Bestellung 2845 Stücke: Lieferzeit 14-21 Tag (e) |
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PJT7801_R1_00001 | Panjit International Inc. |
Description: MOSFET 2P-CH 20V 0.7A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 8570 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJT7801_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.8A
Drain current: -0.7A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.8A
Drain current: -0.7A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
auf Bestellung 2845 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 260+ | 0.28 EUR |
| 575+ | 0.12 EUR |
| 642+ | 0.11 EUR |
| 695+ | 0.1 EUR |
| 758+ | 0.094 EUR |
| 1000+ | 0.089 EUR |
| PJT7801_R1_00001 |
|
Hersteller: Panjit International Inc.
Description: MOSFET 2P-CH 20V 0.7A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 0.7A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 8570 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 0.81 EUR |
| 31+ | 0.57 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.2 EUR |