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PJT7801_R1_00001

PJT7801_R1_00001 Panjit International Inc.


PJT7801.pdf Hersteller: Panjit International Inc.
Description: MOSFET 2P-CH 20V 0.7A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PJT7801_R1_00001 Panjit International Inc.

Description: MOSFET 2P-CH 20V 0.7A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V, Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.

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PJT7801_R1_00001 PJT7801_R1_00001 Hersteller : Panjit International Inc. PJT7801.pdf Description: MOSFET 2P-CH 20V 0.7A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 8570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
31+0.57 EUR
100+0.29 EUR
500+0.25 EUR
1000+0.2 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
PJT7801_R1_00001 Hersteller : PanJit Semiconductor PJT7801.pdf PJT7801-R1 Multi channel transistors
auf Bestellung 2945 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
213+0.34 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 213
Im Einkaufswagen  Stück im Wert von  UAH
PJT7801_R1_00001 PJT7801_R1_00001 Hersteller : Panjit PJT7801-1869166.pdf MOSFET 20V P-Channel Enhancement Mode MOSFETESD Protected
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