PJT7801_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.29 EUR |
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Technische Details PJT7801_R1_00001 Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V, Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote PJT7801_R1_00001 nach Preis ab 0.092 EUR bis 1.33 EUR
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PJT7801_R1_00001 | Hersteller : Panjit International Inc. |
Description: 20V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 5825 Stücke: Lieferzeit 21-28 Tag (e) |
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| PJT7801_R1_00001 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.7A Pulsed drain current: -2.8A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±8V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJT7801_R1_00001 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.7A Pulsed drain current: -2.8A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±8V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJT7801_R1_00001 | Hersteller : Panjit |
MOSFET 20V P-Channel Enhancement Mode MOSFETESD Protected |
Produkt ist nicht verfügbar |