PJT7808_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.16 EUR |
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Technische Details PJT7808_R1_00001 Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V, FET Feature: Logic Level Gate, 1.2V Drive, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote PJT7808_R1_00001 nach Preis ab 0.16 EUR bis 1.14 EUR
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PJT7808_R1_00001 | Hersteller : Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 5919 Stücke: Lieferzeit 10-14 Tag (e) |
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PJT7808_R1_00001 | Hersteller : Panjit |
MOSFET 20V N-Channel Enhancement Mode MOSFET |
auf Bestellung 2757 Stücke: Lieferzeit 14-28 Tag (e) |
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