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PJT7839_R1_00001 Panjit International Inc.


PJT7839.pdf
Hersteller: Panjit International Inc.
Description: MOSFET 2P-CH 60V 0.25A SOT363
Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PJT7839_R1_00001 Panjit International Inc.

Description: MOSFET 2P-CH 60V 0.25A SOT363, Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Drain to Source Voltage (Vdss): 60V, Power - Max: 350mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V, Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V.

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PJT7839_R1_00001 PJT7839_R1_00001 Panjit International Inc. PJT7839.pdf Description: MOSFET 2P-CH 60V 0.25A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 3854 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
43+0.42 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.13 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7839_R1_00001 PJT7839_R1_00001 Panjit PJT7839-1869031.pdf MOSFET 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.61 EUR
10+0.45 EUR
100+0.26 EUR
1000+0.13 EUR
3000+0.11 EUR
9000+0.09 EUR
24000+0.083 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7839_R1_00001 PJT7839.pdf
Hersteller: Panjit International Inc.
Description: MOSFET 2P-CH 60V 0.25A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 3854 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
30+0.6 EUR
43+0.42 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.13 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7839_R1_00001 PJT7839-1869031.pdf
Hersteller: Panjit
MOSFET 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+0.61 EUR
10+0.45 EUR
100+0.26 EUR
1000+0.13 EUR
3000+0.11 EUR
9000+0.09 EUR
24000+0.083 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH