Produkte > PANJIT INTERNATIONAL INC. > PJW4N06A_R2_00001
PJW4N06A_R2_00001

PJW4N06A_R2_00001 Panjit International Inc.

PJW4N06A.pdf Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.2 EUR
Mindestbestellmenge: 2500
Produktrezensionen
Produktbewertung abgeben

Technische Details PJW4N06A_R2_00001 Panjit International Inc.

Description: 60V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V.

Weitere Produktangebote PJW4N06A_R2_00001 nach Preis ab 0.25 EUR bis 1.09 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PJW4N06A_R2_00001 PJW4N06A_R2_00001 Hersteller : Panjit International Inc. PJW4N06A.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
auf Bestellung 5823 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
31+ 0.73 EUR
100+ 0.43 EUR
500+ 0.4 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 24
PJW4N06A_R2_00001 PJW4N06A_R2_00001 Hersteller : Panjit PJW4N06A-1876862.pdf MOSFET 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 1176 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
48+1.09 EUR
59+ 0.89 EUR
100+ 0.61 EUR
1000+ 0.35 EUR
2500+ 0.3 EUR
10000+ 0.27 EUR
25000+ 0.25 EUR
Mindestbestellmenge: 48
PJW4N06A_R2_00001 Hersteller : PanJit Semiconductor PJW4N06A.pdf PJW4N06A-R2 SMD N channel transistors
Produkt ist nicht verfügbar
PJW4N06A-R2-00001 PJW4N06A-R2-00001 Hersteller : Panjit PJW4N06A-1876862.pdf MOSFET SOT-223/MOS/SOT/NFET-60TWMN
Produkt ist nicht verfügbar