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PJW4P06A-AU_R2_000A1

PJW4P06A-AU_R2_000A1 Panjit International Inc.


PJW4P06A-AU.pdf Hersteller: Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.23 EUR
Mindestbestellmenge: 2500
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Technische Details PJW4P06A-AU_R2_000A1 Panjit International Inc.

Description: 60V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V.

Weitere Produktangebote PJW4P06A-AU_R2_000A1 nach Preis ab 0.21 EUR bis 1.03 EUR

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PJW4P06A-AU_R2_000A1 PJW4P06A-AU_R2_000A1 Hersteller : Panjit International Inc. PJW4P06A-AU.pdf Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
auf Bestellung 4518 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.86 EUR
27+ 0.67 EUR
100+ 0.4 EUR
500+ 0.37 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 21
PJW4P06A-AU_R2_000A1 PJW4P06A-AU_R2_000A1 Hersteller : Panjit PJW4P06A-AU-1876674.pdf MOSFET 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 3423 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.91 EUR
10+ 0.75 EUR
100+ 0.51 EUR
500+ 0.39 EUR
1000+ 0.29 EUR
2500+ 0.25 EUR
Mindestbestellmenge: 4
PJW4P06A-AU_R2_000A1 Hersteller : PanJit Semiconductor PJW4P06A-AU.pdf PJW4P06A-AU-R2 SMD P channel transistors
auf Bestellung 1575 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
305+ 0.23 EUR
323+ 0.22 EUR
5000+ 0.21 EUR
Mindestbestellmenge: 70