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PJW4P06A_R2_00701

PJW4P06A_R2_00701 PanJit Semiconductor


Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
Mindestbestellmenge: 55
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Technische Details PJW4P06A_R2_00701 PanJit Semiconductor

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -4A, Case: SOT223, Gate-source voltage: ±20V, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: -16A, Gate charge: 10nC, On-state resistance: 0.13Ω, Power dissipation: 3.1W.