PJX138K_R1_00001 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1nC
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3935 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 368+ | 0.19 EUR |
| 646+ | 0.11 EUR |
| 851+ | 0.084 EUR |
| 1000+ | 0.08 EUR |
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Technische Details PJX138K_R1_00001 PanJit Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 50V, Drain current: 0.35A, Pulsed drain current: 1.2A, Power dissipation: 223mW, Case: SOT563, Gate-source voltage: ±20V, On-state resistance: 4.5Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 1nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote PJX138K_R1_00001 nach Preis ab 0.08 EUR bis 0.42 EUR
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PJX138K_R1_00001 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.35A Pulsed drain current: 1.2A Power dissipation: 223mW Case: SOT563 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1nC |
auf Bestellung 3935 Stücke: Lieferzeit 14-21 Tag (e) |
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PJX138K_R1_00001 | Hersteller : Panjit |
 MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected |
auf Bestellung 28247 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJX138K_R1_00001 | Hersteller : Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
Produkt ist nicht verfügbar |
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| PJX138K_R1_00001 | Hersteller : Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
Produkt ist nicht verfügbar |
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PJX138K-R1-00001 | Hersteller : Panjit |
MOSFETs SOT563 N CHAN 50V |
Produkt ist nicht verfügbar |