PJX138K_R1_00001 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.35A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET x2
Power dissipation: 223mW
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.35A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET x2
Power dissipation: 223mW
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 365+ | 0.2 EUR |
| 620+ | 0.12 EUR |
| 690+ | 0.1 EUR |
| 835+ | 0.086 EUR |
| 885+ | 0.081 EUR |
| 4000+ | 0.078 EUR |
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Technische Details PJX138K_R1_00001 PanJit Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW, Case: SOT563, Mounting: SMD, Kind of package: reel; tape, Gate charge: 1nC, Gate-source voltage: ±20V, Pulsed drain current: 1.2A, Kind of channel: enhanced, Drain-source voltage: 50V, Drain current: 0.35A, On-state resistance: 4.5Ω, Type of transistor: N-MOSFET x2, Power dissipation: 223mW, Polarisation: unipolar, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote PJX138K_R1_00001 nach Preis ab 0.078 EUR bis 0.74 EUR
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PJX138K_R1_00001 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW Case: SOT563 Mounting: SMD Kind of package: reel; tape Gate charge: 1nC Gate-source voltage: ±20V Pulsed drain current: 1.2A Kind of channel: enhanced Drain-source voltage: 50V Drain current: 0.35A On-state resistance: 4.5Ω Type of transistor: N-MOSFET x2 Power dissipation: 223mW Polarisation: unipolar |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJX138K_R1_00001 | Hersteller : Panjit |
 MOSFET 50V N-Channel Enhancement Mode MOSFETESD Protected |
auf Bestellung 43572 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJX138K_R1_00001 | Hersteller : Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
Produkt ist nicht verfügbar |
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| PJX138K_R1_00001 | Hersteller : Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
Produkt ist nicht verfügbar |