PJX8872B_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 60V 0.2A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
| Anzahl | Privatkunde |
|---|---|
| 34+ | 0.63 EUR |
| 55+ | 0.39 EUR |
| 76+ | 0.27 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
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Lieferzeit:
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Mindestmenge:
34 Stücke
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Technische Details PJX8872B_R1_00001 Panjit International Inc.
Description: MOSFET 2N-CH 60V 0.2A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 25V, Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-563.
Weitere Produktangebote PJX8872B_R1_00001
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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PJX8872B_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 60V 0.2A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 25V Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
PJX8872B_R1_00001 | Panjit |
MOSFETs 60V N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJX8872B-R1-00001 | Panjit |
MOSFETs SOT563 N CHAN 60V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJX8872B_R1_00001 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 0.2A; 300mW Mounting: SMD Pulsed drain current: 0.2A Power dissipation: 0.3W Gate charge: 0.82nC Polarisation: unipolar Drain current: 68A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: DFN5060-8 On-state resistance: 3Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJX8872B_R1_00001 |
|
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 60V 0.2A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 60V 0.2A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Mindestbestellmenge: 40000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJX8872B_R1_00001 |
|
Hersteller: Panjit
MOSFETs 60V N-Channel Enhancement Mode MOSFET
MOSFETs 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJX8872B-R1-00001 |
|
Hersteller: Panjit
MOSFETs SOT563 N CHAN 60V
MOSFETs SOT563 N CHAN 60V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJX8872B_R1_00001 |
|
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 0.2A; 300mW
Mounting: SMD
Pulsed drain current: 0.2A
Power dissipation: 0.3W
Gate charge: 0.82nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
On-state resistance: 3Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 0.2A; 300mW
Mounting: SMD
Pulsed drain current: 0.2A
Power dissipation: 0.3W
Gate charge: 0.82nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
On-state resistance: 3Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH