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PMBT6429-QR

PMBT6429-QR Nexperia

PMBT6429-Q.pdf Hersteller: Nexperia
Bipolar Transistors - BJT 45 V, 100 mA NPN general purpose transistor
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Lieferzeit 10-14 Tag (e)
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11+0.26 EUR
16+0.18 EUR
100+0.11 EUR
500+0.07 EUR
1000+0.062 EUR
3000+0.03 EUR
6000+0.028 EUR
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Technische Details PMBT6429-QR Nexperia

Description: TRANS NPN 45V 0.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V, Frequency - Transition: 700MHz, Supplier Device Package: TO-236AB, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 250 mW, Qualification: AEC-Q101.

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PMBT6429-QR PMBT6429-QR Hersteller : Nexperia USA Inc. PMBT6429-Q.pdf Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 700MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q101
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