PMCB60XNEAYL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: SMALL SIGNAL MOSFET FOR MOBILE
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 480mW (Ta), 7W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DSN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V
auf Bestellung 7615 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 0.83 EUR |
| 28+ | 0.64 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.24 EUR |
| 2000+ | 0.22 EUR |
| 5000+ | 0.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMCB60XNEAYL Nexperia USA Inc.
Description: SMALL SIGNAL MOSFET FOR MOBILE, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 4.5V, Power Dissipation (Max): 480mW (Ta), 7W (Tc), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: DSN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V.
Weitere Produktangebote PMCB60XNEAYL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
PMCB60XNEAYL | Hersteller : Nexperia USA Inc. |
Description: SMALL SIGNAL MOSFET FOR MOBILE Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 4.5V Power Dissipation (Max): 480mW (Ta), 7W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: DSN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V |
Produkt ist nicht verfügbar |