| Anzahl | Preis |
|---|---|
| 3+ | 1.04 EUR |
| 10+ | 0.61 EUR |
| 50+ | 0.47 EUR |
| 100+ | 0.41 EUR |
| 200+ | 0.4 EUR |
| 1000+ | 0.34 EUR |
| 2500+ | 0.27 EUR |
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Technische Details PMCB60XNZ Nexperia
Description: PMCB60XN/NAX000/NONE, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V, Power Dissipation (Max): 480mW (Ta), 7W (Tc), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: DSN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 15 V.
Weitere Produktangebote PMCB60XNZ
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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PMCB60XNZ | Nexperia USA Inc. |
 Description: PMCB60XN/NAX000/NONEPackaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V Power Dissipation (Max): 480mW (Ta), 7W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: DSN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
PMCB60XNZ | Nexperia USA Inc. |
Description: PMCB60XN/NAX000/NONE Package / Case: 3-XFDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: DSN1006-3 Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 480mW (Ta), 7W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PMCB60XNZ |
|
Hersteller: Nexperia USA Inc.
Description: PMCB60XN/NAX000/NONE
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Power Dissipation (Max): 480mW (Ta), 7W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DSN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 15 V
Description: PMCB60XN/NAX000/NONE
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Power Dissipation (Max): 480mW (Ta), 7W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DSN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMCB60XNZ |
|
Hersteller: Nexperia USA Inc.
Description: PMCB60XN/NAX000/NONE
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DSN1006-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 480mW (Ta), 7W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: PMCB60XN/NAX000/NONE
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DSN1006-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 480mW (Ta), 7W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH