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PMCXB900UEZ

PMCXB900UEZ Nexperia USA Inc.

PMCXB900UE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 0.6A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 265mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.14 EUR
10000+0.13 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PMCXB900UEZ Nexperia USA Inc.

Description: MOSFET N/P-CH 20V 0.6A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 265mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA, Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V, Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1010B-6.

Weitere Produktangebote PMCXB900UEZ nach Preis ab 0.14 EUR bis 0.81 EUR

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PMCXB900UEZ PMCXB900UEZ Hersteller : Nexperia PMCXB900UE-2938482.pdf MOSFETs PMCXB900UE/SOT1216/DFN1010B-6
auf Bestellung 9409 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.61 EUR
10+0.47 EUR
100+0.26 EUR
1000+0.16 EUR
5000+0.15 EUR
10000+0.14 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
PMCXB900UEZ PMCXB900UEZ Hersteller : Nexperia USA Inc. PMCXB900UE.pdf Description: MOSFET N/P-CH 20V 0.6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 265mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
auf Bestellung 94221 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
36+0.50 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.20 EUR
2000+0.19 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
PMCXB900UEZ Hersteller : NEXPERIA NEXP-S-A0003513061-1.pdf?t.download=true&u=5oefqw Description: NEXPERIA - PMCXB900UEZ - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 1684401 Stücke:
Lieferzeit 14-21 Tag (e)
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PMCXB900UEZ PMCXB900UEZ Hersteller : NEXPERIA 803290550361061pmcxb900ue.pdf Trans MOSFET N/P-CH 20V 0.6A/0.5A 6-Pin DFN-B EP T/R
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PMCXB900UEZ Hersteller : NEXPERIA PMCXB900UE.pdf PMCXB900UEZ Multi channel transistors
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