PMCXB900UEZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N/P-CH 20V 0.6A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 265mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.18 EUR |
| 10000+ | 0.17 EUR |
| 15000+ | 0.16 EUR |
| 25000+ | 0.15 EUR |
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Technische Details PMCXB900UEZ Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 0.6A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 265mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA, Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V, Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1010B-6.
Weitere Produktangebote PMCXB900UEZ nach Preis ab 0.15 EUR bis 0.79 EUR
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PMCXB900UEZ | Hersteller : Nexperia |
MOSFETs 20 V, complementary N/P-channel Trench MOSFET |
auf Bestellung 6889 Stücke: Lieferzeit 10-14 Tag (e) |
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PMCXB900UEZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N/P-CH 20V 0.6A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 265mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 |
auf Bestellung 83880 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMCXB900UEZ | Hersteller : NEXPERIA |
Description: NEXPERIA - PMCXB900UEZ - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 1684401 Stücke: Lieferzeit 14-21 Tag (e) |
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PMCXB900UEZ | Hersteller : NEXPERIA |
Trans MOSFET N/P-CH 20V 0.6A/0.5A 6-Pin DFN-B EP T/R |
Produkt ist nicht verfügbar |