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PMDPB30XNAX

PMDPB30XNAX Nexperia

PMDPB30XNA.pdf Hersteller: Nexperia
MOSFETs PMDPB30XNA/SOT1118/HUSON6
auf Bestellung 3731 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.70 EUR
10+0.59 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.26 EUR
3000+0.22 EUR
Mindestbestellmenge: 5
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Technische Details PMDPB30XNAX Nexperia

Description: MOSFET 2N-CH 20V 4.5A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 640mW (Ta), 11W (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V, Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, Supplier Device Package: 6-HUSON (2x2), Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote PMDPB30XNAX nach Preis ab 0.34 EUR bis 1.13 EUR

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Preis
PMDPB30XNAX PMDPB30XNAX Hersteller : Nexperia USA Inc. PMDPB30XNA.pdf Description: MOSFET 2N-CH 20V 4.5A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 640mW (Ta), 11W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 690 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
26+0.69 EUR
100+0.45 EUR
500+0.34 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
PMDPB30XNAX PMDPB30XNAX Hersteller : Nexperia USA Inc. PMDPB30XNA.pdf Description: MOSFET 2N-CH 20V 4.5A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 640mW (Ta), 11W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH