PMDPB30XNZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET 2N-CH 20V 4A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta), 8.33W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.29 EUR |
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Technische Details PMDPB30XNZ Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 4A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 490mW (Ta), 8.33W (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V, Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 6-HUSON (2x2), Part Status: Active.
Weitere Produktangebote PMDPB30XNZ nach Preis ab 0.23 EUR bis 1.24 EUR
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PMDPB30XNZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 4A 6HUSON Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 490mW (Ta), 8.33W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
auf Bestellung 3411 Stücke: Lieferzeit 10-14 Tag (e) |
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PMDPB30XNZ | Hersteller : Nexperia |
MOSFETs PMDPB30XN/SOT1118/HUSON6 |
auf Bestellung 563 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMDPB30XNZ | Hersteller : NEXPERIA |
Trans MOSFET N-CH 20V 4A 6-Pin HUSON EP T/R |
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PMDPB30XNZ | Hersteller : Nexperia |
Trans MOSFET N-CH 20V 4A 6-Pin HUSON EP T/R |
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PMDPB30XNZ | Hersteller : Nexperia |
Trans MOSFET N-CH 20V 4A 6-Pin HUSON EP T/R |
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| PMDPB30XNZ | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.6A Pulsed drain current: 12A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 69mΩ Mounting: SMD Gate charge: 21.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |