auf Bestellung 563 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.24 EUR |
| 10+ | 0.62 EUR |
| 100+ | 0.49 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.23 EUR |
Produktrezensionen
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Technische Details PMDPB30XNZ Nexperia
Description: MOSFET 2N-CH 20V 4A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 490mW (Ta), 8.33W (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V, Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 6-HUSON (2x2), Part Status: Active.
Weitere Produktangebote PMDPB30XNZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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PMDPB30XNZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 4A 6HUSONPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 490mW (Ta), 8.33W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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PMDPB30XNZ | Hersteller : Nexperia |
Trans MOSFET N-CH 20V 4A 6-Pin HUSON EP T/R |
Produkt ist nicht verfügbar |
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PMDPB30XNZ | Hersteller : Nexperia |
Trans MOSFET N-CH 20V 4A 6-Pin HUSON EP T/R |
Produkt ist nicht verfügbar |
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PMDPB30XNZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 4A 6HUSONPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 490mW (Ta), 8.33W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
Produkt ist nicht verfügbar |


