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PMDPB55XPAX Nexperia


PMDPB55XPA.pdf
Hersteller: Nexperia
MOSFETs 20 V, dual P-channel Trench MOSFET
auf Bestellung 2542 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+1.4 EUR
10+0.86 EUR
100+0.57 EUR
Mindestbestellmenge: 3 Stücke
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Technische Details PMDPB55XPAX Nexperia

Description: MOSFET 2P-CH 20V 3.6A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 490mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 9.3A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 10V, Rds On (Max) @ Id, Vgs: 66mOhm @ 3.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-HUSON (2x2), Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote PMDPB55XPAX nach Preis ab 0.67 EUR bis 1.65 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PMDPB55XPAX PMDPB55XPAX Nexperia USA Inc. PMDPB55XPA.pdf Description: MOSFET 2P-CH 20V 3.6A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 9.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2409 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.65 EUR
21+1.02 EUR
50+0.75 EUR
100+0.67 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PMDPB55XPAX PMDPB55XPA.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 3.6A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 9.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2409 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.65 EUR
21+1.02 EUR
50+0.75 EUR
100+0.67 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH