PMDPB58UPE,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET 2P-CH 20V 3.6A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 515mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.22 EUR |
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Technische Details PMDPB58UPE,115 Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 3.6A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 515mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.6A, Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V, Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: 6-HUSON (2x2).
Weitere Produktangebote PMDPB58UPE,115 nach Preis ab 0.21 EUR bis 0.95 EUR
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PMDPB58UPE,115 | Hersteller : Nexperia |
MOSFETs PMDPB58UPE/SOT1118/HUSON6 |
auf Bestellung 2954 Stücke: Lieferzeit 10-14 Tag (e) |
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PMDPB58UPE,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2P-CH 20V 3.6A 6HUSON Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 515mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 6-HUSON (2x2) |
auf Bestellung 7549 Stücke: Lieferzeit 10-14 Tag (e) |
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PMDPB58UPE,115 | Hersteller : NEXPERIA |
Trans MOSFET P-CH 20V 4.5A 6-Pin HUSON EP T/R |
Produkt ist nicht verfügbar |
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| PMDPB58UPE,115 | Hersteller : NEXPERIA |
PMDPB58UPE.115 Multi channel transistors |
Produkt ist nicht verfügbar |