| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.13 EUR |
| 10+ | 0.77 EUR |
| 100+ | 0.38 EUR |
| 1000+ | 0.32 EUR |
| 3000+ | 0.27 EUR |
| 9000+ | 0.24 EUR |
| 24000+ | 0.23 EUR |
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Technische Details PMDPB70XP,115 Nexperia
Description: MOSFET 2P-CH 30V 2.9A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 490mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.9A, Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V, Rds On (Max) @ Id, Vgs: 87mOhm @ 2.9A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-HUSON (2x2), Part Status: Active.
Weitere Produktangebote PMDPB70XP,115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
PMDPB70XP,115 | Nexperia USA Inc. |
 Description: MOSFET 2P-CH 30V 2.9A 6HUSONPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 490mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V Rds On (Max) @ Id, Vgs: 87mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
PMDPB70XP,115 | Nexperia USA Inc. |
Description: MOSFET 2P-CH 30V 2.9A 6HUSON Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 490mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V Rds On (Max) @ Id, Vgs: 87mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PMDPB70XP,115 | Nexperia |
Trans MOSFET P-CH 30V 2.9A 6-Pin HUSON EP T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PMDPB70XP,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2P-CH 30V 2.9A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V
Rds On (Max) @ Id, Vgs: 87mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Description: MOSFET 2P-CH 30V 2.9A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V
Rds On (Max) @ Id, Vgs: 87mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PMDPB70XP,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2P-CH 30V 2.9A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V
Rds On (Max) @ Id, Vgs: 87mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Description: MOSFET 2P-CH 30V 2.9A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V
Rds On (Max) @ Id, Vgs: 87mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMDPB70XP,115 |
|
Hersteller: Nexperia
Trans MOSFET P-CH 30V 2.9A 6-Pin HUSON EP T/R
Trans MOSFET P-CH 30V 2.9A 6-Pin HUSON EP T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH