auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.19 EUR |
Produktrezensionen
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Technische Details PMDPB70XPE,115 Nexperia
Description: MOSFET 2P-CH 20V 3A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 515mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3A, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 6-HUSON (2x2), Part Status: Active.
Weitere Produktangebote PMDPB70XPE,115 nach Preis ab 0.16 EUR bis 1.4 EUR
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PMDPB70XPE,115 | Hersteller : Nexperia |
 Trans MOSFET P-CH 20V 4.2A 6-Pin HUSON EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDPB70XPE,115 | Hersteller : Nexperia |
Trans MOSFET P-CH 20V 4.2A 6-Pin HUSON EP T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDPB70XPE,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2P-CH 20V 3A 6HUSON Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 515mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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PMDPB70XPE,115 | Hersteller : Nexperia |
MOSFET PMDPB70XPE/SOT1118/HUSON6 |
auf Bestellung 17133 Stücke: Lieferzeit 14-28 Tag (e) |
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PMDPB70XPE,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2P-CH 20V 3A 6HUSON Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 515mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
auf Bestellung 5455 Stücke: Lieferzeit 21-28 Tag (e) |
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PMDPB70XPE,115 | Hersteller : NEXPERIA |
Trans MOSFET P-CH 20V 4.2A 6-Pin HUSON EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDPB70XPE,115 | Hersteller : Nexperia |
Trans MOSFET P-CH 20V 4.2A 6-Pin HUSON EP T/R |
Produkt ist nicht verfügbar |
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| PMDPB70XPE,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.1A; Idm: -12A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.1A Pulsed drain current: -12A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 112mΩ Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMDPB70XPE,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.1A; Idm: -12A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.1A Pulsed drain current: -12A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 112mΩ Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |