| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.2 EUR |
| 9000+ | 0.19 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3000 Stücke
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Technische Details PMDPB70XPE,115 Nexperia
Description: MOSFET 2P-CH 20V 3A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 515mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3A, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 6-HUSON (2x2), Part Status: Active.
Weitere Produktangebote PMDPB70XPE,115 nach Preis ab 0.19 EUR bis 1.44 EUR
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PMDPB70XPE,115 | Nexperia |
 Trans MOSFET P-CH 20V 4.2A 6-Pin HUSON EP T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDPB70XPE,115 | Nexperia |
Trans MOSFET P-CH 20V 4.2A 6-Pin HUSON EP T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDPB70XPE,115 | Nexperia USA Inc. |
Description: MOSFET 2P-CH 20V 3A 6HUSON Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 515mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
auf Bestellung 3004 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PMDPB70XPE,115 |
|
Hersteller: Nexperia
Trans MOSFET P-CH 20V 4.2A 6-Pin HUSON EP T/R
Trans MOSFET P-CH 20V 4.2A 6-Pin HUSON EP T/R
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.2 EUR |
| 9000+ | 0.19 EUR |
| PMDPB70XPE,115 |
|
Hersteller: Nexperia
Trans MOSFET P-CH 20V 4.2A 6-Pin HUSON EP T/R
Trans MOSFET P-CH 20V 4.2A 6-Pin HUSON EP T/R
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.24 EUR |
| 6000+ | 0.21 EUR |
| 9000+ | 0.19 EUR |
| PMDPB70XPE,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 3A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 515mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Description: MOSFET 2P-CH 20V 3A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 515mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
auf Bestellung 3004 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.44 EUR |
| 24+ | 0.88 EUR |
| 50+ | 0.64 EUR |
| 100+ | 0.57 EUR |