| Anzahl | Preis |
|---|---|
| 4+ | 0.85 EUR |
| 10+ | 0.6 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.21 EUR |
| 6000+ | 0.19 EUR |
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Technische Details PMDPB70XPE,115 Nexperia
Description: MOSFET 2P-CH 20V 3A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 515mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3A, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 6-HUSON (2x2), Part Status: Active.
Weitere Produktangebote PMDPB70XPE,115 nach Preis ab 0.48 EUR bis 1.21 EUR
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PMDPB70XPE,115 | Nexperia USA Inc. |
 Description: MOSFET 2P-CH 20V 3A 6HUSONPart Status: Active Supplier Device Package: 6-HUSON (2x2) Vgs(th) (Max) @ Id: 1.25V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3A Drain to Source Voltage (Vdss): 20V Power - Max: 515mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 3004 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PMDPB70XPE,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 3A 6HUSON
Part Status: Active
Supplier Device Package: 6-HUSON (2x2)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 515mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 3A 6HUSON
Part Status: Active
Supplier Device Package: 6-HUSON (2x2)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 515mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 3004 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.21 EUR |
| 24+ | 0.74 EUR |
| 50+ | 0.54 EUR |
| 100+ | 0.48 EUR |