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PMDPB80XP,115

PMDPB80XP,115 NEXPERIA


4380311082056438pmdpb80xp.pdf Hersteller: NEXPERIA
Trans MOSFET P-CH 20V 2.7A 6-Pin HUSON EP T/R
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Technische Details PMDPB80XP,115 NEXPERIA

Description: MOSFET 2P-CH 20V 2.7A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 485mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.7A, Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V, FET Feature: Logic Level Gate, 1.8V Drive, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-HUSON (2x2).

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PMDPB80XP,115 Hersteller : NEXPERIA PMDPB80XP.pdf PMDPB80XP.115 Multi channel transistors
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PMDPB80XP,115 PMDPB80XP,115 Hersteller : Nexperia USA Inc. PMDPB80XP.pdf Description: MOSFET 2P-CH 20V 2.7A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 485mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMDPB80XP,115 PMDPB80XP,115 Hersteller : Nexperia USA Inc. PMDPB80XP.pdf Description: MOSFET 2P-CH 20V 2.7A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 485mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMDPB80XP,115 PMDPB80XP,115 Hersteller : Nexperia PMDPB80XP-1320557.pdf MOSFET 20V, Dual P-Channel Trench MOSFET
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Im Einkaufswagen  Stück im Wert von  UAH