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PMDPB95XNE2X

PMDPB95XNE2X NXP Semiconductors

PMDPB95XNE2.pdf Hersteller: NXP Semiconductors
Description: MOSFET 2N-CH 30V 2.7A 6HUSON
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 510mW (Ta), 8.33W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 258pF @ 15V
Rds On (Max) @ Id, Vgs: 99mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
auf Bestellung 440930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2312+0.21 EUR
Mindestbestellmenge: 2312
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PMDPB95XNE2X NXP Semiconductors

Description: MOSFET 2N-CH 30V 2.7A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 510mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 258pF @ 15V, Rds On (Max) @ Id, Vgs: 99mOhm @ 2.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 6-HUSON (2x2), Part Status: Active.

Weitere Produktangebote PMDPB95XNE2X nach Preis ab 0.18 EUR bis 1.00 EUR

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PMDPB95XNE2X PMDPB95XNE2X Hersteller : Nexperia PMDPB95XNE2.pdf MOSFETs PMDPB95XNE2/SOT1118/HUSON6
auf Bestellung 2205 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+0.95 EUR
10+0.60 EUR
100+0.30 EUR
1000+0.27 EUR
3000+0.22 EUR
9000+0.18 EUR
Mindestbestellmenge: 3
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PMDPB95XNE2X PMDPB95XNE2X Hersteller : Nexperia USA Inc. PMDPB95XNE2.pdf Description: MOSFET 2N-CH 30V 2.7A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 510mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 258pF @ 15V
Rds On (Max) @ Id, Vgs: 99mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
auf Bestellung 1055 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.00 EUR
29+0.62 EUR
100+0.33 EUR
500+0.30 EUR
1000+0.27 EUR
Mindestbestellmenge: 18
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PMDPB95XNE2X PMDPB95XNE2X Hersteller : NEXPERIA 580170075452155pmdpb95xne2.pdf Trans MOSFET N-CH 30V 2.7A 6-Pin HUSON EP T/R
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PMDPB95XNE2X Hersteller : NEXPERIA PMDPB95XNE2.pdf PMDPB95XNE2X Multi channel transistors
Produkt ist nicht verfügbar
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PMDPB95XNE2X PMDPB95XNE2X Hersteller : Nexperia USA Inc. PMDPB95XNE2.pdf Description: MOSFET 2N-CH 30V 2.7A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 510mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 258pF @ 15V
Rds On (Max) @ Id, Vgs: 99mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH