PMDT670UPE,115 Nexperia
auf Bestellung 2348 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.59 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.25 EUR |
| 1000+ | 0.16 EUR |
| 8000+ | 0.14 EUR |
| 24000+ | 0.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMDT670UPE,115 Nexperia
Description: MOSFET 2P-CH 20V 0.55A SOT666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 330mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 550mA, Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V, Rds On (Max) @ Id, Vgs: 850mOhm @ 400mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.14nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-666, Part Status: Not For New Designs, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PMDT670UPE,115 nach Preis ab 0.17 EUR bis 0.60 EUR
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PMDT670UPE,115 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET 2P-CH 20V 0.55A SOT666Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 330mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 550mA Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V Rds On (Max) @ Id, Vgs: 850mOhm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.14nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-666 Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3858 Stücke: Lieferzeit 10-14 Tag (e) |
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PMDT670UPE,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - PMDT670UPE,115 - Dual-MOSFET, p-Kanal, 20 V, 20 V, 550 mA, 550 mA, 0.67 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 550mA hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 550mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.67ohm Verlustleistung, p-Kanal: 500mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Anzahl der Pins: 6Pins Drain-Source-Durchgangswiderstand, n-Kanal: 0.67ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 500mW Betriebstemperatur, max.: 150°C |
auf Bestellung 1165 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDT670UPE,115 | Hersteller : NEXPERIA |
Trans MOSFET P-CH 20V 0.55A Automotive 6-Pin SOT-666 T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDT670UPE,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2P-CH 20V 0.55A SOT666 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 330mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 550mA Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V Rds On (Max) @ Id, Vgs: 850mOhm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.14nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-666 Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
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