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PMDXB290UNEZ

PMDXB290UNEZ Nexperia USA Inc.

PMDXB290UNE.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 0.93A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 280mW (Ta), 6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 1607 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
36+0.5 EUR
100+0.25 EUR
500+0.21 EUR
1000+0.15 EUR
Mindestbestellmenge: 25
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Technische Details PMDXB290UNEZ Nexperia USA Inc.

Description: MOSFET 2N-CH 20V 0.93A 6DFN, Part Status: Active, Supplier Device Package: DFN1010B-6, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc), Drain to Source Voltage (Vdss): 20V, Power - Max: 280mW (Ta), 6W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-XFDFN Exposed Pad, Packaging: Tape & Reel (TR).

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PMDXB290UNEZ PMDXB290UNEZ Hersteller : Nexperia PMDXB290UNE-3084419.pdf MOSFET MOS DISCRETES
auf Bestellung 2948 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.77 EUR
10+0.57 EUR
100+0.32 EUR
1000+0.16 EUR
5000+0.14 EUR
10000+0.11 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PMDXB290UNEZ PMDXB290UNEZ Hersteller : Nexperia USA Inc. PMDXB290UNE.pdf Description: MOSFET 2N-CH 20V 0.93A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 280mW (Ta), 6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH