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PMDXB550UNEZ

PMDXB550UNEZ Nexperia USA Inc.


PMDXB550UNE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.59A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 590mA
Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
auf Bestellung 30000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.18 EUR
10000+0.15 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PMDXB550UNEZ Nexperia USA Inc.

Description: MOSFET 2N-CH 30V 0.59A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 285mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 590mA, Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1010B-6, Part Status: Active.

Weitere Produktangebote PMDXB550UNEZ nach Preis ab 0.15 EUR bis 0.84 EUR

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PMDXB550UNEZ PMDXB550UNEZ Hersteller : Nexperia PMDXB550UNE.pdf MOSFETs PMDXB550UNE/SOT1216/DFN1010B-6
auf Bestellung 192880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.75 EUR
10+0.49 EUR
100+0.25 EUR
1000+0.20 EUR
5000+0.18 EUR
10000+0.15 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PMDXB550UNEZ PMDXB550UNEZ Hersteller : Nexperia USA Inc. PMDXB550UNE.pdf Description: MOSFET 2N-CH 30V 0.59A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 590mA
Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
auf Bestellung 41263 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
34+0.53 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.22 EUR
2000+0.20 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
PMDXB550UNEZ PMDXB550UNEZ Hersteller : NEXPERIA 805544083232860pmdxb550une.pdf Trans MOSFET N-CH 30V 590A Automotive 6-Pin DFN-B EP T/R
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PMDXB550UNEZ Hersteller : NEXPERIA PMDXB550UNE.pdf PMDXB550UNEZ Multi channel transistors
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