| Anzahl | Preis |
|---|---|
| 5+ | 0.64 EUR |
| 10+ | 0.52 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.2 EUR |
| 2500+ | 0.18 EUR |
| 5000+ | 0.16 EUR |
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Technische Details PMDXB550UNEZ Nexperia
Description: MOSFET 2N-CH 30V 0.59A 6DFN, Part Status: Active, Supplier Device Package: DFN1010B-6, Vgs(th) (Max) @ Id: 950mV @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 590mA, Drain to Source Voltage (Vdss): 30V, Power - Max: 285mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-XFDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMDXB550UNEZ nach Preis ab 0.39 EUR bis 1 EUR
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PMDXB550UNEZ | Nexperia USA Inc. |
 Description: MOSFET 2N-CH 30V 0.59A 6DFNPart Status: Active Supplier Device Package: DFN1010B-6 Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V Current - Continuous Drain (Id) @ 25°C: 590mA Drain to Source Voltage (Vdss): 30V Power - Max: 285mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 3364 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PMDXB550UNEZ |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.59A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 590mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 285mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 0.59A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 590mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 285mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 3364 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 29+ | 0.61 EUR |
| 50+ | 0.44 EUR |
| 100+ | 0.39 EUR |