auf Bestellung 6951 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3077+ | 0.048 EUR |
| 3449+ | 0.041 EUR |
| 6000+ | 0.034 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMDXB600UNEZ Nexperia
Description: MOSFET 2N-CH 20V 0.6A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 265mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 600mA, Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V, Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1010B-6, Part Status: Active.
Weitere Produktangebote PMDXB600UNEZ nach Preis ab 0.029 EUR bis 0.72 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
PMDXB600UNEZ | Hersteller : Nexperia |
 Trans MOSFET N-CH 20V 0.6A 6-Pin DFN-B EP T/R |
auf Bestellung 6951 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
PMDXB600UNEZ | Hersteller : Nexperia |
Trans MOSFET N-CH 20V 0.6A 6-Pin DFN-B EP T/R |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
PMDXB600UNEZ | Hersteller : Nexperia |
Trans MOSFET N-CH 20V 0.6A 6-Pin DFN-B EP T/R |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
PMDXB600UNEZ | Hersteller : Nexperia |
Trans MOSFET N-CH 20V 0.6A 6-Pin DFN-B EP T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
PMDXB600UNEZ | Hersteller : Nexperia |
Trans MOSFET N-CH 20V 0.6A 6-Pin DFN-B EP T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
PMDXB600UNEZ | Hersteller : Nexperia |
MOSFETs SOT1216 2NCH 20V .6A |
auf Bestellung 33193 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
PMDXB600UNEZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 0.6A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 265mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 Part Status: Active |
auf Bestellung 2811 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
PMDXB600UNEZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 0.6A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 265mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 Part Status: Active |
auf Bestellung 2811 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
PMDXB600UNEZ | Hersteller : NEXPERIA |
Trans MOSFET N-CH 20V 0.6A 6-Pin DFN-B EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
PMDXB600UNEZ | Hersteller : Nexperia |
Trans MOSFET N-CH 20V 0.6A 6-Pin DFN-B EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
PMDXB600UNEZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 0.6A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 265mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 Part Status: Active |
Produkt ist nicht verfügbar |