| Anzahl | Preis |
|---|---|
| 6+ | 0.53 EUR |
| 10+ | 0.36 EUR |
| 100+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.07 EUR |
| 2500+ | 0.067 EUR |
| 5000+ | 0.063 EUR |
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Technische Details PMDXB600UNEZ Nexperia
Description: MOSFET 2N-CH 20V 0.6A 6DFN, Part Status: Active, Supplier Device Package: DFN1010B-6, Vgs(th) (Max) @ Id: 950mV @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V, Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 600mA, Drain to Source Voltage (Vdss): 20V, Power - Max: 265mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-XFDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMDXB600UNEZ
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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PMDXB600UNEZ | Nexperia USA Inc. |
 Description: MOSFET 2N-CH 20V 0.6A 6DFNPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 265mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
|
PMDXB600UNEZ | Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 0.6A 6DFN Part Status: Active Supplier Device Package: DFN1010B-6 Vgs(th) (Max) @ Id: 950mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V Current - Continuous Drain (Id) @ 25°C: 600mA Drain to Source Voltage (Vdss): 20V Power - Max: 265mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PMDXB600UNEZ |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 0.6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 265mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
Description: MOSFET 2N-CH 20V 0.6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 265mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| PMDXB600UNEZ |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 0.6A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 600mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 265mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 0.6A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 600mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 265mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)