PMEG120G10ELRZ Nexperia USA Inc.

Description: DIODE SIGE 120V 1A CFP3, Technology: SiGe (Silicon Germanium), Reverse Recovery Time (trr): 6 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-123W, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 30 nA @ 120 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 120 V, Part Status: Obsolete, Operating Temperature - Junction: 175°C, Supplier Device Package: CFP3, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 36pF @ 1V, 1MHz.