auf Bestellung 2650 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.75 EUR |
| 10+ | 0.58 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.21 EUR |
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Technische Details PMEG120G20ELR-QX Nexperia
Description: DIODE SIGE 120V 2A SOD123W, Packaging: Tape & Reel (TR), Package / Case: SOD-123W, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 11 ns, Technology: SiGe (Silicon Germanium), Capacitance @ Vr, F: 75pF @ 1V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: SOD-123W, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 120 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A, Current - Reverse Leakage @ Vr: 30 nA @ 120 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PMEG120G20ELR-QX
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| PMEG120G20ELR-QX | Hersteller : NEXPERIA |
Diode Switching SiGe 2.8A Automotive 2-Pin CFP3 T/R |
Produkt ist nicht verfügbar |
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PMEG120G20ELR-QX | Hersteller : Nexperia USA Inc. |
Description: DIODE SIGE 120V 2A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 75pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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PMEG120G20ELR-QX | Hersteller : Nexperia USA Inc. |
Description: DIODE SIGE 120V 2A SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 75pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |

