PMFPB8032XP,115 Nexperia USA Inc.

Description: MOSFET P-CH 20V 2.7A HUSON6, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Part Status: Obsolete, Supplier Device Package: 6-HUSON (2x2), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 485mW (Ta), 6.25W (Tc), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UFDFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V.