PMFPB8032XP,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET P-CH 20V 2.7A HUSON6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 485mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
auf Bestellung 123 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.62 EUR |
| 18+ | 1.01 EUR |
| 100+ | 0.66 EUR |
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Technische Details PMFPB8032XP,115 Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.7A HUSON6, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 485mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-HUSON (2x2), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V.
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PMFPB8032XP,115 | Hersteller : NEXPERIA |
Trans MOSFET P-CH 20V 2.7A 6-Pin HUSON EP T/R |
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PMFPB8032XP,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 2.7A HUSON6 Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 485mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V |
Produkt ist nicht verfügbar |