PMGD280UN,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET 2N-CH 20V 0.87A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 870mA
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 20V
Rds On (Max) @ Id, Vgs: 340mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Not For New Designs
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
| 6000+ | 0.11 EUR |
| 21000+ | 0.10 EUR |
Produktrezensionen
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Technische Details PMGD280UN,115 Nexperia USA Inc.
Description: NEXPERIA - PMGD280UN,115 - Dual-MOSFET, n-Kanal, 20 V, 200 mA, 0.28 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: -V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 200mA, Drain-Source-Durchgangswiderstand, p-Kanal: -ohm, Verlustleistung, p-Kanal: -W, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: SOT-363, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.28ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 400mW, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (21-Jan-2025).
Weitere Produktangebote PMGD280UN,115 nach Preis ab 0.12 EUR bis 0.62 EUR
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PMGD280UN,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.55A; 400mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.4W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.66Ω Gate charge: 0.89nC Kind of channel: enhancement Gate-source voltage: ±8V Drain-source voltage: 20V Drain current: 0.55A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2728 Stücke: Lieferzeit 7-14 Tag (e) |
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PMGD280UN,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.55A; 400mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.4W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.66Ω Gate charge: 0.89nC Kind of channel: enhancement Gate-source voltage: ±8V Drain-source voltage: 20V Drain current: 0.55A |
auf Bestellung 2728 Stücke: Lieferzeit 14-21 Tag (e) |
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PMGD280UN,115 | Hersteller : Nexperia |
MOSFETs PMGD280UN/SOT363/SC-88 |
auf Bestellung 227373 Stücke: Lieferzeit 10-14 Tag (e) |
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PMGD280UN,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 0.87A 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 400mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 870mA Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 20V Rds On (Max) @ Id, Vgs: 340mOhm @ 200mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSSOP Part Status: Not For New Designs |
auf Bestellung 64551 Stücke: Lieferzeit 10-14 Tag (e) |
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PMGD280UN,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - PMGD280UN,115 - Dual-MOSFET, n-Kanal, 20 V, 200 mA, 0.28 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: -A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: -V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 200mA Drain-Source-Durchgangswiderstand, p-Kanal: -ohm Verlustleistung, p-Kanal: -W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.28ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 400mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 8020 Stücke: Lieferzeit 14-21 Tag (e) |
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PMGD280UN,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 20V 0.87A 6-Pin TSSOP T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PMGD280UN,115 | Hersteller : NXP |
Transistor: N-MOSFET x2; unipolarny; 20V; 0,55A; 400mW; SOT363; PMGD280UN,115 PMGD280UN NEXPERIA TPMGD280un Anzahl je Verpackung: 50 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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